IRFR110 Datasheet, PDF (2/7 Pages) Intersil Corporation – 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

IRFR110, IRFU110
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Continuous Drain
T_C = 100^oC . .
Current
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. I_D
. I_D
Pulsed Drain Current (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
IRFR110, IRFU110
100
100
4.7
3.3
17
±20
30
0.2
19
-55 to 175
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mj
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BV_DSS I_D = 250µA, V_GS = 0V (Figure 10)
100
Gate to Threshold Voltage
V_GS(TH) V_GS = V_DS, I_D = 250µA
2
Zero Gate Voltage Drain Current
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V,
-
T_J = 150^oC
On-State Drain Current
I_D(ON) V_DS > I_D(ON) x r_DS(ON)MAX, V_GS = 10V
4.7
Gate to Source Leakage Current
I_GSS V_GS = ±20V
-
Drain to Source On Resistance
r_DS(ON) I_D = 3.3A, V_GS = 10V (Figures 8, 9)
-
(Note 4)
Forward Transconductance (Note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
g_fs
V_DS = 50V, I_DS = 3.3A (Figure 12)
1.3
t_d(ON) V_DD = 50V, I_D ≈ 5.6A, R_GS = 24Ω, R_L = 9.1Ω,
-
t_r
V_GS = 10V
-
MOSFET Switching Times are Essentially Indepen-
t_{d(OFF) dent of Operating Temperature}
-
t_f
-
Q_g(TOT) V_GS = 10V, I_D ≈ 5.6A, V_DS = 0.8 x Rated BV_DSS,
-
Q_gs
R_L = 14Ω, I_G(REF) = 1.5mA (Figure 14)
Gate Charge is Essentially Independent of Operat-
-
Q_{gd ing Temperature}
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
C_ISS V_GS = 0V, V_DS = 25V, f = 1.0MHz
-
C_OSS ^{(Figure 11)}
-
C_RSS
-
L_D
Measured from the
Modified MOSFET
-
Drain Lead, 6mm
Symbol Showing the
(0.25in) from Package Internal Devices
to Center of Die
Inductances
L_S
Measured from The
Source Lead, 6mm
(0.25in) from Header to
D
-
L_D
Source Bonding Pad
G
L_S
Junction to Case
Junction to Ambient
R_θJC
R_θJA
Free Air Operation
S
-
-
TYP
MAX UNITS
-
-
V
-
4
V
-
25
µA
-
250
µA
-
-
A
-
±100
nA
0.41 0.540
Ω
2.0
-
S
7.6
11
ns
24
36
ns
14
21
ns
14
21
ns
5.2
7.7
nC
1.5
-
nC
2.2
-
nC
180
-
pF
82
-
pF
15
-
pF
4.5
-
nH
7.5
-
nH
-
5.0
o_C/W
-
110
o_C/W
4-372