IRFR110 Datasheet, PDF (3/7 Pages) Intersil Corporation – 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

IRFR110, IRFU110
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
I_SD Modified MOSFET
D
Symbol Showing the
Pulse Source to Drain Current (Note 2)
I_{SDM Integral Reverse}
P-N Junction Diode
G
MIN
TYP
MAX UNITS
-
-
4.7
A
-
-
17
A
Source to Drain Diode Voltage (Note 4)
Reverse Recovery Time
Reverse Recovery Charge
V_SD
t_rr
Q_RR
S
T_J = 25^oC, I_SD = 4.7A, V_GS = 0V (Figure 13)
T_J = 25^oC, I_SD = 5.6A, dI_SD/dt = 100A/µs
T_J = 25^oC, I_SD = 5.6A, dI_SD/dt = 100A/µs
-
-
2.5
V
46
96
200
ns
0.17
0.38
0.83
µC
NOTES:
2. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
3. V_DD = 25V, starting T_J = 25^oC, L = 1.3mH, R_G = 25Ω, peak I_AS = 4.7A.
4. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75 100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
5
4
3
2
1
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
0.5
1 0.2
0.1
0.05
0.02
0.1
0.01
SINGLE PULSE
0.01
10^-5
10^-4
10^-3
10^-2
10^-1
t₁, RECTANGULAR PULSE DURATION (s)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
P_DM
t₁
t₂
NOTES:
DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC + T_C
1
10
4-373