IRFR110 Datasheet, PDF (1/7 Pages) Intersil Corporation – 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

Data Sheet
IRFR110, IRFU110
July 1999 File Number 3275.3
4.7A, 100V, 0.540 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. These advanced
power MOSFETs are designed for use in applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA17441.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFU110
TO-251AA
IFU110
IRFR110
TO-252AA
IFR110
NOTE: When ordering, use the entire part number.
Features
• 4.7A, 100V
• r_DS(ON) = 0.540Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• 175^oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
4-371
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999