IRFP9150 Datasheet, PDF (5/7 Pages) Intersil Corporation – 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

IRFP9150
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
I_D = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4500
4000
3500
3000
2500
2000
1500
1000
500
0
V_GS = 0V, f = 1MHz
C_ISS = C_GS + C_GD
C_RSS = C_GD
C_OSS ≈ C_DS + C_GD
C_ISS
C_OSS
C_RSS
-10
-20
-30
-40
-50
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
9
25^oC
150^oC
6
3
0
-10
-20
-30
-40
-50
I_D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
150^oC
1
25^oC
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V_SD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
0
I_D = -25A
-5
V_DS = -80V
-10
V_DS = -50V
-15
V_DS = -20V
-20
0
20 40 60 80 100 120 140 160 180
Q_g(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-67