IRFP9150 Datasheet, PDF (4/7 Pages) Intersil Corporation – 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

IRFP9150
Typical Performance Curves Unless Otherwise Specified (Continued)
200
IRFP9150,1
100
10ms
IRFP9150,1
10
OPERATION IN THIS
AREA IS LIMITED
BY r_DS(ON)
100ms
0.1s
T_C = 25^oC
T_J = MAX RATED
1
1
10
IRFP9150
IRFP9151
V_DS, DRAIN VOLTAGE (V)
1s
DC
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-100
V_GS = 14V
-80
-60
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T_C = 25^oC
V_GS = 12V
V_GS = 10V
V_GS = 9V
-40
V_GS = 8V
V_GS = 7V
-20
V_GS = 6V
V_GS = 4V
V_GS = 5V
0
-10
-20
-30
-40
-50
(V_DS), DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. OUTPUT CHARACTERISTICS
PULSE DURATION = 80µs
-50 _{DUTY CYCLE = 0.5% MAX}
T_C = 25^oC
-40
-30
V_GS = 10V
V_GS = 8V
V_GS = 7V
-20
V_GS = 6V
-10
0
0
V_GS = 5V
V_GS = 4V
-1
-2
-3
-4
-5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
350
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
300
V_GS = 10V
250
200
150
100
V_GS = 20V
50
0
-20
-40
-60
-80
-100
I_D, DRAIN CURRENT (A)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V_DS ≤ -50V
-10
-1
-0.1
0
-2
-4
-6
-8
-10
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
2.2 _{PULSE DURATION = 80µs}
DUTY CYCLE = 0.5% MAX
V_GS = 10V, I_D = -10A
1.8
1.4
1.0
0.6
0.2
-40
0
40
80
120
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
4-66