IRFP9150 Datasheet, PDF (2/7 Pages) Intersil Corporation – 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

IRFP9150
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 10kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V_DGR
Continuous Drain
T_C =100^oC . . .
Current
.......
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
I_D
I_D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_as
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
IRFP9150
-100
-100
-25
-18
-100
±20
150
1.2
1300
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/^oC
mJ
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BV_DSS V_GS = 0V, I_D = -250µA (Figure 10)
1
Gate Threshold Voltage
V_GS(TH) V_DS = V_GS, I_D = -250µA
-2.0
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
I_DSS V_DS = Rated BV_DSS, V_GS = 0V
-
V_DS = 0.8 x Rated BV_DSS, V_GS = 0V, T_C = 125^oC
-
I_{D(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V}
-25
I_GSS V_GS = ±20V
-
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
r_DS(ON) V_GS = -10V, I_D = -10A (Figure 8, 9)
-
g_fs
V_DS ≤ -10V, I_D = -12.5A (Figure 12)
4
t_d(ON) V_DD = -50V, I_D ≈ -25A, R_G = 6.8Ω, R_L = 2Ω
-
t_r
(Figures 17 and 18) MOSFET switching times are es- _-
sentially independent of operating temperature).
t_d(OFF)
-
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
t_f
-
Q_g(TOT) V_GS = -10V, I_D = -25A, V_DS = 0.8 x Rated BV_DSS
-
I_g(REF) = -1.5mA (Figures 14, 19, 20)
Q_gs
(Gate Charge is Essentially Independent Of Operat-
ing Temperature)
-
Q_gd
-
C_ISS V_GS = 0V, V_DS = -25V, f = 1.0MHz
-
C_OSS ^{(Figure 11)}
-
C_RSS
-
Internal Drain Inductance
Internal Source Inductance
L_D
Measured From the Drain Modified MOSFET
-
Lead, 6mm (0.25in) From Symbol Showing the In-
the Package to the Center ternal Device Induc-
of the Die
tances
L_S
Measured From the Source
Pin, 6mm (0.25in) From
Header to the Source
D
-
L_D
Bonding Pad
G
L_S
TYP MAX UNITS
-
-
V
-
-4.0
V
-
25
µA
-
250 µA
-
-
A
- ±100 nA
0.090 0.150 Ω
10
-
S
16 24
ns
110 160
ns
65 100
ns
46 70
ns
82 120 nC
14
-
nC
42
-
nC
2400 -
pF
850
-
pF
400
-
pF
5.0
-
nH
13
-
nH
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R_θJC
R_θJA
Free Air Operation
S
-
-
0.83 ^oC/W
-
-
30 ⁰C/W
4-64