IRFP9150 Datasheet, PDF (1/7 Pages) Intersil Corporation – 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

Data Sheet
IRFP9150
August 1999 File Number 2293.4
25A, 100V, 0.150 Ohm, P-Channel Power
MOSFET
This advanced power MOSFET is designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. It is a P-Channel
enhancement mode silicon-gate power field effect transistor
designed for applications such as switching regulators,
switching convertors, motor drivers, relay drivers, and drivers
for high power bipolar switching transistors requiring high
speed and low gate drive power. These types can be
operated directly from integrated circuits.
The P-Channel IRFP9150 is an approximate electrical
complement to the N-channel IRFP150.
Formerly developmental type TA49230.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFP9150
TO-247
IRFP9150
NOTE: When ordering, use the entire part number.
Features
• 25A, 100V
• r_DS(ON) = 0.150Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
4-63
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999