IRFP9150 Datasheet, PDF (3/7 Pages) Intersil Corporation – 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET

IRFP9150
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
I_SD
I_SDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
G
MIN TYP MAX UNITS
-
-
-25
A
D
-
-
-100
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovered Charge
V_SD
t_rr
Q_RR
T_J = 25^oC, I_SD = -25A, V_GS = 0V (Figure 13)
T_J = 25^oC, I_SD = -25A, dI_SD/dt = 100A/µs
T_J = 25^oC, I_SD = -25A, dI_SD/dt = 100A/µs
-
-0.9 -1.5
V
-
150 300
ns
0.3 0.7 1.5
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive Rating: Pulse width limited by Maximum junction temperature. See Transient Thermal Impedance curve (Figure 3
4. V_DD = 25V, start T_J = 25^oC, L = 3.2mH, R_G = 25Ω, peak I_AS = 25A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
-30
-25
-20
-15
-10
-5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
DUTY CYCLE IN DESCENDING ORDER
0.5
0.2
0.1
0.05
1
0.02
0.01
0.10
SINGLE PULSE
0.01
10^-5
10^-4
10^-3
10^-2
10^-1
t₁, SQUARE WAVE PULSE DURATION (s)
P_DM
NOTES:
t₁
t₂
DUTY FACTOR: D = t₁/t₂
T_J = P_DM x Z_θJC x R_θJC + T_C
1
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-65