80C88_04 Datasheet, PDF (15/32 Pages) Intersil Corporation – CMOS 8/16-Bit Microprocessor

80C88
Absolute Maximum Ratings
Thermal Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +8.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.5V to V_CC +0.5V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
M80C88-2 Only. . . . . . . . . . . . . . . . . . . . . . . . . +4.75V to +5.25V
Operating Temperature Range
C80C88/-2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0^oC to +70^oC
I80C88/-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40^oC to +85^oC
M80C88 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55^oC to +125^oC
Thermal Resistance (Typical)
θ_JA (^oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
50
CERDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . .
30
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175^oC
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150^oC
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65^oC to +150^oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300^oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9750 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
DC Electrical Specifications
V_CC = 5.0V, ±10%; T_A = 0^oC to +70^oC (C80C88, C80C88-2)
V_CC = 5.0V, ±10%; T_A = -40^oC to +85^oC (l80C88, I80C88-2)
V_CC = 5.0V, ±10%; T_A = -55^oC to +125^oC (M80C88)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITION
V_lH
Logical One
Input Voltage
2.0
-
2.2
V
C80C88, I80C88 (Note 4)
V
M80C88 (Note 4)
V_IL
VIHC
VILC
Logical Zero Input Voltage
CLK Logical One Input Voltage
CLK Logical Zero Input Voltage
-
0.8
V
V_CC -0.8
-
V
-
0.8
V
V_OH
V_OL
I_I
Output High Voltage
Output Low Voltage
Input Leakage Current
3.0
-
V_CC -0.4
-
0.4
-1.0
1.0
V
lOH = -2.5mA
V
lOH = -100µA
V
lOL = +2.5mA
µA
V_IN = 0V or V_CC
Pins 17-19, 21-23, 33
lBHH
lBHL
I_O
ICCSB
ICCOP
Input Current-Bus Hold High
Input Current-Bus Hold Low
Output Leakage Current
Standby Power Supply Current
Operating Power Supply Current
-40
-400
µA
V_IN = - 3.0V (Note 1)
40
400
µA
V_IN = - 0.8V (Note 2)
-
-10.0
µA
V_OUT = 0V (Note 5)
-
500
µA
V_CC = 5.5V (Note 3)
-
10
mA/MHz FREQ = Max, V_IN = V_CC or GND,
Outputs Open
NOTES:
1. lBHH should be measured after raising V_IN to V_CC and then lowering to 3.0V on the following pins 2-16, 26-32, 34-39.
2. IBHL should be measured after lowering V_IN to GND and then raising to 0.8V on the following pins: 2-16, 35-39.
3. lCCSB tested during clock high time after HALT instruction executed. V_IN = V_CC or GND, V_CC = 5.5V, Outputs unloaded.
4. MN/MX is a strap option and should be held to V_CC or GND.
5. IO should be measured by putting the pin in a high impedance state and then driving V_OUT to GND on the following pins: 26-29 and 32.
Capacitance T_A = 25^oC
SYMBOL
PARAMETER
TYPICAL UNITS
TEST CONDITIONS
CIN
Input Capacitance
25
pF
FREQ = 1MHz. All measurements are referenced to device GND
COUT Output Capacitance
25
pF
FREQ = 1MHz. All measurements are referenced to device GND
CI/O I/O Capacitance
25
pF
FREQ = 1MHz. All measurements are referenced to device GND
15