ISL70444SEH Datasheet, PDF (1/23 Pages) Intersil Corporation – 19MHz Rad Hard 40V Quad Rail-to-Rail Input-Output, Low-Power Operational Amplifiers

19MHz Rad Hard 40V Quad Rail-to-Rail Input-Output,
Low-Power Operational Amplifiers
ISL70444SEH
The ISL70444SEH features four low-power amplifiers
optimized to provide maximum dynamic range. These op
amps feature a unique combination of rail to rail operation on
the input and output as well as a slew enhanced front end that
provides ultra fast slew rates positively proportional to a given
step size; thereby increasing accuracy under transient
conditions, whether it’s periodic or momentary. They also offer
low power, low offset voltage, and low temperature drift,
making it ideal for applications requiring both high DC
accuracy and AC performance. With <5µs recovery for Single
Event Transients (SET) (LET_TH = 86.4MeV•cm²/mg), the
number of filtering components needed is drastically reduced.
The ISL70444SEH is also immune to Single Event Latch-up as
it is fabricated in Intersil’s Proprietary PR40 Silicon On
Insulator (SOI) process.
They are designed to operate over a single supply range of 2.7V
to 40V or a split supply voltage range of ±1.35V to ±20V.
Applications for these amplifiers include precision
instrumentation, data acquisition, precision power supply
controls, and process controls.
The ISL70444SEH is available in a 14 Ld Hermetic Ceramic
Flatpack and die forms that operate over the temperature
range of -55°C to +125°C.
Related Literature
• ISL70444SEH Evaluation Board User’s Guide AN1824
• ISL70444SEH Single Event Effects Report AN1838
• ISL70444SEH SMD 5962-13214
• ISL70444SEH Radiation Test Report
Features
• Electrically screened to DLA SMD# 5962-13214
• Acceptance tested to 50krad(Si) (LDR) wafer-by-wafer
• <5µs recovery from SEE (LET_TH = 86.4MeV•cm²/mg)
• Unity gain stable
• Rail-to-rail input and output
• Wide gain·bandwidth product . . . . . . . . . . . . . . . . . . . . 19MHz
• Wide single and dual supply range. . . . . . . . 2.7V to 40V Max
• Low input offset voltage . . . . . . . . . . . . . . . . . . . . . . . . . 300µV
• Low current consumption (per amplifier) . . . . . . . 1.1mA, Typ
• No phase reversal with input overdrive
• Slew rate
- Large signal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V/µs
• Operating temperature range. . . . . . . . . . . .-55°C to +125°C
• Radiation tolerance
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . 100krad(Si)*
- SEL/SEB LET_TH . . . . . . . . . . . . . . . . . . . . 86.4MeV•cm²/mg
* Product capability established by initial characterization.
Applications
• Precision instruments
• Active filter blocks
• Data acquisition
• Power supply control
• Process control
R_F
+
R_SENSE
R_IN-
10kΩ
R_IN+
10kΩ
LOAD
100kΩ
-IN _-
V+
ISL70444
+2.7V
to 40V
V_OUT
+IN
+
V-
V_OUT =
R_REF+
10 (I_LOAD * R_SENSE)
100kΩ
V_REF
FIGURE 1. TYPICAL APPLICATION: SINGLE-SUPPLY, HIGH-SIDE
CURRENT SENSE AMPLIFIER
30
Vs = ±18V
20
10
0
GROUNDED
-10
BIASED
-20
-30
0
50
100
150
200
250
300
krad (Si)
FIGURE 2. V_OS SHIFT vs HIGH DOSE RATE RADIATION
June 14, 2013
1
FN8411.1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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