TLE7183F Datasheet, PDF (9/28 Pages) Infineon Technologies AG – 3-Phase Bridge Driver IC

TLE7183F
General Product Characteristics
Absolute Maximum Ratings (cont’d)¹⁾
40 °C ≤ T_j ≤ 150 °C; all voltages with respect to ground, positive current flowing into pin (unless otherwise specified)
Pos.
Parameter
Symbol
Limit Values
Unit Conditions
Min.
Max.
4.1.28 Peak reflow soldering temperature²⁾
T_ref
–
Thermal Resistance
260
°C –
4.1.29 Junction to case
Power Dissipation
R_thjC
–
5
K/W –
4.1.30
Power Dissipation (DC) @
TCASE=125°C
P_tot
–
2
W–
ESD Susceptibility
4.1.31 ESD Resistivity³⁾
V_ESD
–
4.1.32 ESD Resistivity (charge device model)⁴⁾ V_ESD
–
1) Not subject to production test, specified by design.
2
kV
750
V
2) Reflow profile IPC/JEDEC J-STD-020C
3) ESD susceptibility HBM according to EIA/JESD 22-A 114B
4) ESD susceptibility CDM according to EIA/JESD 22-C 101
Attention: Stresses above the ones listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
Attention: Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as “outside” normal operating
range. Protection functions are not designed for continuous repetitive operation.
4.2
Functional Range
Pos. Parameter
4.2.1 Supply voltage¹⁾²⁾
4.2.2
4.2.3
Duty cycle³⁾
PWM frequency
Symbol
V_S
D
F_PWM
Limit Values
Min.
Max.
5.5
20
5.5
28
0
100
0
25
4.2.4 Quiescent current⁴⁾
I_Q
–
30
4.2.5 Quiescent current into VDH
I_{Q_VDH}
–
30
4.2.6 Supply current at Vs
I_Vs
–
175
–
175
110
110
4.2.7 Supply current at Vs(device
I_Vs(o)
–
60
disabled by ENA)
50
4.2.8 Currrent into VDH (device not in I_VDH
1.5
sleep mode)
Unit Conditions
V
DC
t<1s
%
–
kHz Total gate charge
400nC
µA
V_S,V_DH<20 V
µA
V_DH<20V;
V_S pin open
F_PWM=25kHz
Q_G=250nC:
mA V_S = 5.5V
V_S = 14V
V_S = 17V
V_S = 20V
mA Vs=5.5V..17V
Vs=17V..20V
mA V_VDH=5.5..20V
INH=high
Data Sheet
9
V2.1, 2008-04-30