TLE7183F Datasheet, PDF (14/28 Pages) Infineon Technologies AG – 3-Phase Bridge Driver IC

TLE7183F
Description and Electrical Characteristics
Electrical Characteristics MOSFET drivers - Dynamic Characteristics
V_S = 5.5 to 20V, T_j = -40 to +150°C, F_PWM < 25kHz, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
5.1.18 Min. internal dead time
t_{DT_MIN}
5.1.19 Programmable internal dead time t_DT
5.1.20 Max. internal dead time
5.1.21 Turn on current, peak
t_{DT_MAX}
I_G(on)
50
–
200 ns
0.26 0.41 0.56 µs
0.64 1.05 1.45
1.07 1.85 2.63
2.02 3.82 5.62
2.33 –
6.35 µs
–
0.8
–
A
5.1.22 Turn on current, peak
I_G(on)
–
1.5
–
A
5.1.23 Turn off current, peak
I_G(off)
–
1.5
–
A
5.1.24
Rise time (20-80%)
T_j = -40°C
T_j = 25°C
T_j = 150°C
t_{G_rise}
–
ns
400
150 400
700
5.1.25
Fall time (20-80%)
T_j = -40°C
T_j = 25°C
T_j = 150°C
t_{G_fall}
–
ns
230
150 230
500
5.1.26 Input propagation time (low on)
t_P(ILN)
90
190 290 ns
5.1.27 Input propagation time (low off)
t_P(ILF)
0
100 200 ns
5.1.28 Input propagation time (high on) t_P(IHN)
90
190 290 ns
5.1.29 Input propagation time (high off) t_P(IHF)
0
100 200 ns
5.1.30 Absolute input propagation time t_P(an)
–
–
70
ns
difference (all channels turn on)
DT pin to GND
(R_DT=0Ω)
R_DT=10 kΩ
R_DT=47 kΩ
R_DT=100 kΩ
R_DT=1000 kΩ
DT pin open
VGxx-VSxx=0V;
Vs=5.5..8V;
C=22nF;
R_Load=1Ω
VGxx-VSxx=0V;
Vs=8..20V
C=22nF;
R_Load=1Ω
VGxx-VSxx=10V;
Vs=8..20V
C=22nF;
R_Load=1Ω
C=22nF; R_Load=1Ω
C=22nF; R_Load=1Ω
C=22nF; R_Load=1Ω
C=22nF; R_Load=1Ω
C=22nF; R_Load=1Ω
C=22nF; R_Load=1Ω
C=22nF; R_Load=1Ω
5.1.31 Absolute input propagation time t_P(af)
–
–
50
ns
C=22nF; R_Load=1Ω
difference (all channels turn off)
5.1.32 Absolute input propagation time t_P(1hfln)
–
–
150 ns
C=22nF; R_Load=1Ω
difference (1channel high off - low
on)
5.1.33 Absolute input propagation time t_P(1lfhn)
–
–
150 ns
C=22nF; R_Load=1Ω
difference (1channel low off - high
on)
Data Sheet
14
V2.1, 2008-04-30