SPP20N60C2 Datasheet, PDF (9/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
17 Typ. switching losses¹⁾
E = f(R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V,I_D=20A
1
mWs
0.8
*) E_on includes SDP06S60 diode
commutation losses.
1_{This chart helps to estimate}
the switching power losses.
The values can be different
under other operating conditions.
0.7
0.6
0.5
0.4
E_on*
0.3
0.2
E_off
0.1
0
0 5 10 15 20 25 30 _Ω 40
R_G
19 Avalanche energy
E_AS = f (T_j)
par.: I_D = 10 A, V_DD = 50 V
750
mJ
18 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
20
A
10
T_j (START)=25°C
5
T_j (START)=125°C
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
20 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
SPP20N60C2
720
V
600
550
500
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
T_j
680
660
640
620
600
580
560
540
-60 -20
20
60 100 °C
180
T_j
Page 9
2002-08-12