SPP20N60C2 Datasheet, PDF (7/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
9 Typ. drain-source on resistance
R_DS(on)=f(I_D )
parameter: T_j=150°C, V_GS
1.5
Ω
6V
6.5V
1.3
7V
7.5V
1.2
8V
8.5V
1.1
9V
10V
1
12V
20V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0 5 10 15 20 25 30 _A 40
I_D
10 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 13 A, V_GS = 10 V
SPP20N60C2
1.1
Ω
0.9
0.8
0.7
0.6
0.5
0.4
0.3
98%
0.2
typ
0.1
0
-60 -20
20
60 100 °C
180
T_j
11 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
70
A
60
55
25°C
50
150°C
45
40
35
30
25
20
15
10
5
0
0
5
10
V
20
V_GS
12 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 20 A pulsed
SPP20N60C2
16
V
12
0,2 V_{DS max}
0,8 V_{DS max}
10
8
6
4
2
0
0
20
40
60
80 _nC
120
Q_Gate
Page 7
2002-08-12