English
Language : 

SPP20N60C2 Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor
Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Electrical Characteristics
Parameter
Symbol
Conditions
Characteristics
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,4) Co(er)
energy related
Effective output capacitance,5) Co(tr)
time related
VDS ≥2*ID *RDS(on)max,
ID =13A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Gate Charge Characteristics
VDD=380V, VGS=0/13V,
ID =20A,
RG=3.6Ω, Tj=125°C
Gate to source charge
Gate to drain charge
Gate charge total
Qgs
Qgd
Qg
VDD=350V, ID=20A
VDD=350V, ID=20A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=350V, ID=20A
Values
Unit
min. typ. max.
-
12
-S
- 3000 - pF
- 1170 -
-
28
-
-
83
-
- 160 -
-
21
- ns
-
51
-
-
56 84
-
6
9
-
21
- nC
-
46
-
-
79 103
-
8
-V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated asPAV =EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Page 3
2002-08-12