SPP20N60C2 Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor

Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thremal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ³⁾
Linear derating factor
Linear derating factor, FullPAK
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Symbol
R_thJC
R_{thJC_FP}
R_thJA
R_{thJA_FP}
R_thJA
T_sold
Values
Unit
min. typ. max.
-
-
0.6 K/W
-
-
3.6
-
-
62
-
-
80
-
-
62
-
35
-
-
- 1.67 W/K
-
- 0.28
-
- 260 °C
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V_GS=0V, I_D=0.25mA
Drain-source avalanche breakdown voltage
V_GS=0V, I_D=20A
Gate threshold voltage, V_GS = V_DS
I_D =1mA
Zero gate voltage drain current
V_DS = 600 V, V_GS = 0 V, T_j = 25 °C
V_DS = 600 V, V_GS = 0 V, T_j = 150 °C
V_(BR)DSS 600
-
V_(BR)DS
-
700
V_GS(th)
3.5
4.5
I_DSS
-
0.1
-
-
Gate-source leakage current
V_GS=20V, V_DS=0V
Drain-source on-state resistance
V_GS=10V, I_D=13A, T_j=25°C
Gate input resistance
f = 1 MHz, open drain
I_GSS
R_DS(on)
R_G
-
-
- 0.16
- 0.54
-V
-
5.5
µA
1
100
100 nA
0.19 _Ω
-
Page 2
2002-08-12