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| SPP20N60C2 Datasheet, PDF (8/14 Pages) Infineon Technologies AG – Cool MOS™ Power Transistor | |||
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Final data
SPP20N60C2, SPB20N60C2
SPA20N60C2
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP20N60C2
14 Typ. switching time
t = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=3.6â¦
10 3
A
ns
10 1
10 2
tr
td(off)
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
15 Typ. switching time
t = f (RG), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, ID=20A
10 3
ns
td(off)
10 2
td(on)
tr
td(on)
10 1
tf
10 0
0
5 10 15 20 25 30 35 40 A 50
ID
16 Typ. switching losses1)
E = f (ID), inductive load, Tj=125°C
par.: VDS=380V, VGS=0/+13V, RG=3.6â¦
1.6
*) Eon includes SDP06S60 diode
mWs commutation losses.
1This chart helps to estimate
the switching power losses.
The values can be different
1.2 under other operating conditions.
1
0.8
10 1
tf
10 0
0
5 10 15 20 25 30 ⦠40
RG
Page 8
0.6
Eon*
0.4
Eoff
0.2
0
0 5 10 15 20 25 30 35 A 45
ID
2002-08-12
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