SPP07N60C3_09 Datasheet, PDF (9/15 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP07N60C3
SPI07N60C3, SPA07N60C3
17 Typ. drain source voltage slope
dv/dt = f(R_G), inductive load, T_j = 125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=7.3A
100
V/ns
80
18 Typ. switching losses
E = f (I_D), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, R_G=12Ω
0.025
*) Eon includes SDP06S60
diode commutation losses.
mWs
70
60
0.015
50
dv/dt(on)
40
0.01
Eoff
30
20
dv/dt(off)
10
0.005
Eon*
0
0
20
40
60
80
Ω
120
R_G
0
0 1 2 3 4 5 6_A 8
I_D
19 Typ. switching losses
E = f(R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=7.3A
0.2
*) Eon includes SDP06S60
mWs _{diode commutation losses.}
20 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
8
A
0.16
0.14
0.12
0.1
Eoff
0.08
0.06
Eon*
0.04
0.02
6
5
T_{j(START)=125°C}
4
3
2
1
T_{j(START)=25°C}
0
0
20
40
60
80 100 _Ω 130
R_G
Rev. 3.2
Page 9
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
2009-11-27