SPP07N60C3_09 Datasheet, PDF (7/15 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP07N60C3
SPI07N60C3, SPA07N60C3
9 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
10
Ω
4V
10 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 4.6 A, V_GS = 10 V
SPP07N60C3
3.4
Ω
4.5V
8
2.8
7
2.4
5V
6
2
6V
5
6.5V
1.6
8V
4
5.5V
20V
1.2
3
0.8
2
1
0.4
98%
typ
0
0 2 4 6 8 10 12 _A 15
I_D
0
-60 -20 20
60 100 °C
180
T_j
11 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
24
A
20
25°C
18
16
14
12
10
8
150°C
12 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 7.3 A pulsed
SPP07N60C3
16
V
12
0,2 V_{DS max}
10
0,8 V_{DS max}
8
6
6
4
4
2
0
0 2 4 6 8 10 12 14 16 _V 20
V_GS
2
0
0 4 8 12 16 20 24 28 _nC 34
Q_Gate
Rev. 3.2
Page 7
2009-11-27