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SPP07N60C3_09 Datasheet, PDF (10/15 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
21 Avalanche energy
EAS = f (Tj)
par.: ID = 5.5 A, VDD = 50 V
260
mJ
220
200
180
160
140
120
100
80
60
40
20
0
20 40 60 80 100 120 °C 160
Tj
23 Avalanche power losses
PAR = f (f )
parameter: EAR=0.5mJ
500
W
SPP07N60C3
SPI07N60C3, SPA07N60C3
22 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
SPP07N60C3
720
V
680
660
640
620
600
580
560
540
-60 -20 20
60 100
24 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
10 4
pF
°C
180
Tj
Ciss
10 3
300
10 2
Coss
200
10 1
Crss
100
0
10
4
Rev. 3.2
10 5
MHz 10 6
f
10 0
0
100 200 300 400
V
600
VDS
Page 10
2009-11-27