SPP07N60C3_09 Datasheet, PDF (8/15 Pages) Infineon Technologies AG – New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP07N60C3
SPI07N60C3, SPA07N60C3
13 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP07N60C3}
A
10 ¹
14 Typ. switching time
t = f (I_D), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, R_G=12Ω
90
ns
td(off)
70
60
50
40
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
30
tf
td(on)
20
tr
10
0
0 1 2 3 4 5 6_A 8
I_D
15 Typ. switching time
t = f (R_G), inductive load, T_j=125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=7.3 A
500
ns
400
16 Typ. drain current slope
di/dt = f(R_G), inductive load, T_j = 125°C
par.: V_DS=380V, V_GS=0/+13V, I_D=7.3A
3000
A/µs
350
2000
300
250
td(off)
1500
200
150
td(on)
100
tf
tr
50
1000
di/dt(on)
500
di/dt(off)
0
0
20
40
60
80 100 _Ω 130
R_G
Rev. 3.2
Page 8
0
0
20
40
60
80 100 _Ω 130
R_G
2009-11-27