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SKP10N60A Datasheet, PDF (9/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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SKP10N60A, SKB10N60A
SKW10N60A
500ns
1400nC
400ns
300ns
200ns
100ns
IF = 20A
IF = 5A
IF = 10A
1200nC
1000nC
800nC
600nC
400nC
200nC
IF = 20A
IF = 10A
IF = 5A
0ns
100A /µs 300A /µs 500A/µs 700A /µs 900A /µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
0nC
100A/µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
20A
1 0 0 0 A /µs
16A
12A
IF = 20A
IF = 10A
IF = 5A
8A
4A
0A
100A /µs 300A/µs 500A/µs 700A/µs 900A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
8 0 0 A /µs
6 0 0 A /µs
4 0 0 A /µs
2 0 0 A /µs
0 A /µs
10 0A /µs 300A /µs 500 A /µs 70 0A /µs 9 00A /µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
9
Sep-02
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