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| SKP10N60A Datasheet, PDF (2/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode | |||
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SKP10N60A, SKB10N60A
SKW10N60A
Thermal Resistance
Parameter
Symbol Conditions
Characteristic
IGBT thermal resistance,
junction â case
Diode thermal resistance,
junction â case
Thermal resistance,
junction â ambient
SMD version, device on PCB1)
RthJC
RthJCD
RthJA
RthJA
TO-220AB
TO-247AC
TO-263AB
Max. Value
SKP10N60A
SKB10N60A
SKW10n60A
1.35
2.4
62
40
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500µA
VGE = 15V, IC=10A
Tj=25°C
Tj=150°C
VGE=0V, IF=10A
Tj=25°C
Tj=150°C
IC=300µA,VCE=VGE
VCE=600V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=10A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=10A
VGE=15V
TO-220AB
TO-247AC
VGE=15V,tSCâ¤10µs
VCC ⤠600V,
Tj ⤠150°C
min.
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
-
Value
Typ.
-
2
2.3
1.4
1.25
4
-
-
-
6.7
550
62
42
52
7
13
100
Unit
max.
-V
2.4
2.8
1.8
1.65
5
µA
40
1500
100 nA
-S
660 pF
75
51
68 nC
- nH
-
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for collector connection. PCB is
vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Sep-02
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