SKP10N60A Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP10N60A, SKB10N60A
SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower E_off compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
P-TO-220-3-1
(TO-220AB)
C
G
E
P-TO-263-3-2 (D²-PAK) P-TO-247-3-1
(TO-263AB)
(TO-247AC)
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
V_CE
I_C
V_CE(sat)
T_j
Package
SKP10N60A
600V 10A
2.3V
150°C TO-220AB
SKB10N60A
TO-263AB
SKW10N60A
TO-247AC
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 600V, T_j ≤ 150°C
Diode forward current
T_C = 25°C
T_C = 100°C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time¹⁾
V_GE = 15V, V_CC ≤ 600V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j , T_stg
Ordering Code
Q67040-S4458
Q67040-S4459
Q67040-S4506
Value
SKP10N60A
SKB10N60A
SKW10N60A
600
20
10.6
40
40
Unit
V
A
21
10
42
±20
V
µs
10
W
92
-55...+150
°C
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
1
Sep-02