SKP10N60A Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP10N60A, SKB10N60A
SKW10N60A
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=25°C,
V_CC=400V,I_C=10A,
V_GE=0/15V,
R_G=25Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=55pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=25°C,
V_R=200V, I_F=10A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
178
24
0.15
0.17
0.320
34 ns
15
214
29
0.173 mJ
0.221
0.394
220
- ns
20
-
200
-
310
- nC
4.5
-A
180
- A/µs
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
t_S
t_F
Q_rr
I_rrm
di_rr/dt
T_j=150°C
V_CC=400V,I_C=10A,
V_GE=0/15V,
R_G=25Ω
L_σ¹⁾=180nH,
C_σ¹⁾=55pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_R=200V, I_F=10A,
di_F/dt=200A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
28
12
198
26
0.260
0.280
0.540
34 ns
15
238
32
0.299 mJ
0.364
0.663
350
- ns
36
-
314
-
690
- nC
6.3
-A
200
- A/µs
1) _{Leakage inductance L σ an d Stray capacity Cσ due to dynamic test circuit in Figure E.}
3
Sep-02