SKP10N60A Datasheet, PDF (5/14 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

SKP10N60A, SKB10N60A
SKW10N60A
35A
30A
25A
20A
15A
10A
5A
V _{G E}= 2 0 V
15V
13V
11V
9V
7V
5V
0A
0V
1V
2V
3V
4V
5V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T_j = 25°C)
35A
30A
25A
20A
15A
10A
5A
V _{G E}= 2 0 V
15V
13V
11V
9V
7V
5V
0A
0V
1V
2V
3V
4V
5V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T_j = 150°C)
35A
30A
25A
T _j= + 2 5 ° C
+150°C
20A
15A
10A
5A
0A
0V
2V
4V
6V
8V
10V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V_CE = 10V)
3,5V
3,0V
I_C = 2 0 A
2,5V
2,0V
I_C = 1 0 A
I_C= 5 A
1,5V
0°C
50°C
100°C
150°C
T_j, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V_GE = 15V)
5
Sep-02