PTFA260451E Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz

PTFA260451E
Package Outline Specifications
Package H-30265-2
(45° X 2.03
[.080])
2X 2.59±0.38
[.107 ±.015]
15.60±0.51
[.614±.020]
FLANGE 9.78
[.385]
7.11
[.280]
CL
D
S
LID 10.16±0.25
CL ^{[.400±.010]}
2X R1.60
[.063]
G
2x 7.11
[.280]
15.23
[.600]
10.16±0.25
[.400±.010]
4x 1.52
[.060]
SPH 1.57
[.062]
0.0381 [.0015] -A-
1.02
[.040]
20.31
[.800]
3.48±0.38
[.137±.015]
H-3 0 2 6 5 - 2 - 1 - 2 3 0 3
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch] (min)
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 06, 2008-03-04