PTFA260451E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz

Typical Performance (cont.)
Broadband Performance
V_DD = 28 V, I_DQ = 500 mA, P_OUT = 4 W
16
0
Efficiency
15
Gain
-5
14
-10
13
Return Loss _-15
12
2600
2620 2640 2660 2680
Frequency (MHz)
-20
2700
PTFA260451E
Output Power vs. Supply Voltage
I_DQ = 500 mA, ƒ = 2680 MHz
48
47
46
45
22 24 26 28 30 32 34
Supply Voltage (V)
Intermodulation Distortion vs. Output Power
V_DD = 28 V, I_DQ = 500 mA, ƒ₁ = 2679 MHz, ƒ₂ = 2680 MHz
-20
-30
3rd Order
-40
-50 5th
-60
7th
-70
30
35
40
45
50
Output Power, PEP (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.09 A
0.28 A
0.46 A
0.70 A
1.39 A
2.09 A
2.78 A
3.48 A
4.17 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 06, 2008-03-04