PTFA260451E Datasheet, PDF (8/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz

PTFA260451E
Reference Circuit (cont.)
R3
R5 C5 R4 ^C3 _C1
C4
+
10
35V
R1R2
Q1
R6 ^{R7 C6}
VDD
QQ1
C2
RF_IN
R8
C7 _C8
C10
C9
C12
L1
C11
VDD
C17 ^C19
C18 _C15
RF_OUT
VDD
C16
L2
C13 _C14
Reference circuit assembly diagram* (not to scale)
Component
Description
C1, C2, C3
Capacitor, 0.001 µF
C4
Tantalum capacitor, 10 µF, 35 V
C5, C11, C15
Capacitor, 0.1 µF
C6, C7, C9, C13, C19 Ceramic capacitor, 4.7 pF
C8, C18
Ceramic capacitor, 1.2 pF
C10, C14
Capacitor, 1 µF
C12, C16
Tantalum capacitor, 10 µF, 50 V
C17
Q1
QQ1
Ceramic capacitor, 0.4 pF
Transistor
Voltage regulator
R1
Chip resistor, 1.3 k-ohms
R2
Chip resistor, 1.2 k-ohms
R3
Chip resistor, 2 k-ohms
R4
Potentiometer, 2 k-ohms
R5, R7
Chip resistor, 1 k-ohms
R6, R8
Chip resistor, 10 ohms
L1, L2
Ferrite
a260451ef _assy
Suggested Manufacturer
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
ATC
Garrett Electronics
ATC
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Philips
P/N or Comment
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT-ND
100B 4R7
100B 1R2
920C105KW
TPSE106K050R0400
100B 0R4
BCP56
LM7805
P1.3KGCT-ND
P1.2KGCT-ND
P2.0KECT-ND
3224W-202ETR-ND
P1.0KECT-ND
P10ECT-ND
BDS46/3.8.8-452
*Gerber Files for this circuit available on request
Data Sheet
8 of 10
Rev. 06, 2008-03-04