PTFA260451E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz

PTFA260451E
Thermally-Enhanced High Power RF LDMOS FET
45 W, 2.62 – 2.68 GHz
Description
The PTFA260451E is a thermally-enhanced 45-watt, internally-
matched GOLDMOS ^® FET intended for CDMA2000, Super3G (3GPP
TSG RAN), and WiMAX applications from 2.62 to 2.68 GHz. Thermally-
enhanced packaging provide the coolest operation available. Full
gold metallization ensures excellent device lifetime and reliability.
PTFA260451E
Package H-30265-2
3-Carrier CDMA2000 Performance
V_DD = 28 V, I_DQ = 500 mA, ƒ = 2680 MHz
60
-40
50
-45
Alt_1 2.5 MHz
40
-50
Adj 2.135 MHz
30
-55
20
-60
10
Efficiency _-65
0
-70
25
30
35
40
45
50
Output Power, Avg. (dBm)
Features
• Lead-free, RoHS-compliant and thermally-
enhanced packaging
• Internal matching for wideband performance
• Typical three-carrier CDMA2000 performance
- Average output power = 10 W
- Gain = 14 dB
- Efficiency = 24%
- ACPR = –52 dBc
• Typical CW performance
- Output power at P–1dB = 50 W
- Efficiency = 46%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability
• Low HCI Drift
• Capable of handling 10:1 VSWR @ 28 V, 45 W
(CW) output power
RF Performance
CDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 500 mA, P_OUT = 10 W AVG, ƒ = 2680 MHz
Characteristic
Adjacent Channel Power Ratio
Gain
Drain Efficiency
Symbol Min Typ
ACPR
—
–45
G_ps
—
14
η_D
—
24
Max
—
—
—
Unit
dBc
dB
%
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 06, 2008-03-04