PTFA260451E Datasheet, PDF (7/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62-2.68 GHz

PTFA260451E
Reference Circuit
C0.1001µF
R1
1.3K V
R2
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C0.2001µF
C3
0.001µF
R2K3 _V
R2K4 _V
RF_IN
R1.50K _V
R6
10V
C4
10 µF
35V
C5
0.1µF
R7
1K V
C6
4.7pF
l4
C7
4. 7p F
l1
l2
1R08V
DUT
l3
l5 l6 l7
C8
1. 2p F
l8
l10
l9
L1
C9
C10
4.7pF
1µF
VDD
C11
C12
.1µF
10µF
50V
C19
4. 7p F
l11
l12
l13
l14
RF_OUT
C17
0. 4p F
C18
1. 2p F
Reference circuit schematic for ƒ = 2680 MHz
C13
4. 7p F
L2
C14
1µF
C15
.1µF
C16
10µF
50V
a260451ef_sch
Circuit Assembly Information
DUT
PTFA260451E
PCB
0.76 mm [.030"] thick, ε_r = 4.5
LDMOS Transistor
Rogers TMM4
2 oz. copper
Microstrip
Electrical Characteristics at 2680 MHz¹
l1
0.130 λ, 50.0 Ω
l2
0.061 λ, 44.0 Ω
l3
0.065 λ, 44.0 Ω
l4
0.299 λ, 62.0 Ω
l5
0.018 λ, 44.0 Ω
l6
0.029 λ, 15.0 Ω
l7
0.077 λ, 12.5 Ω
l8
0.234 λ, 55.0 Ω
l9
0.218 λ, 55.0 Ω
l10
0.050 λ, 6.6 Ω
l11 (taper)
0.080 λ, 6.6 Ω / 50.0 Ω
l12
0.053 λ, 50.0 Ω
l13
0.133 λ, 50.0 Ω
l14
0.070 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
7.87 x 1.47
3.68 x 1.83
3.91 x 1.83
18.44 x 1.02
1.09 x 1.83
1.65 x 7.62
4.32 x 9.45
14.33 x 1.27
13.36 x 1.27
2.74 x 19.10
4.90 x 19.10 / 1.32
3.25 x 1.32
8.13 x 1.32
4.27 x 1.32
Dimensions: L x W (in.)
0.310 x 0.058
0.145 x 0.072
0.154 x 0.072
0.726 x 0.040
0.043 x 0.072
0.065 x 0.300
0.170 x 0.372
0.564 x 0.050
0.526 x 0.050
0.108 x 0.752
0.193 x 0.752 / 0.052
0.128 x 0.052
0.320 x 0.052
0.168 x 0.052
Data Sheet
7 of 10
Rev. 06, 2008-03-04