PTFA212002E Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz

PTFA212002E
Package Outline Specifications
Package 30275
2X 45°±5° X 1.19
[.047]
16.61±0.51
[.654±.020]
9.40+-00..1105
[.370 ^+-..000]046
4X 3.23±0.25
[.127±.010]
D
D
G
G
35.56
[1.400]
4X 11.68
[.460]
2X R 1.59
[.063]
S
L ID
9
.14
+0.10
-0.15
2X 3.18
[.125]
[.360+-..0000]46
10.16
[.400]
4.55±0.38
[.179±.015]
31.24±0.28
[1.230±.011]
41.15
[1.620]
1.63
[.064]
2.18
[.086] SPH
0.038 [.0015] -A-
ERA-H-30275-4-1-2304
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Preliminary Data Sheet
9 of 10
Rev. 02, 2005-05-16