PTFA212002E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz

PTFA212002E
Thermally-Enhanced High Power RF LDMOS FET
200 W, 2110 – 2170 MHz
Description
The PTFA212002E is a 200-watt, internally-matched, laterally double-
diffused, GOLDMOS push-pull FET. It is characaterized for single-
and two-carrier WCDMA operation from 2110 to 2170 MHz. Ther-
mally-enhanced packaging provides the coolest operation avail-
able. Full gold metallization ensures excellent device lifetime and
reliability.
PTFA212002E
Package 30275
Two–carrier WCDMA Drive–up
V_DD = 28 V, I_DQ = 1600 mA, f₁ = 2140 MHz, f₂ = 2150 MHz,
3GPP WCDMA s ignal, P/A R = 8.0 dB, 3.84 MHz BW
-25
35
Drain Efficiency
-30
30
-35
25
-40
20
Gain
-45
15
-50
-55
37
IM3 ACPR
40
43
46
Output Power, Avg. (dBm)
10
5
49
• Thermally-enhanced packaging
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2140 MHz, 28 V
- Average output power = 44 W
- Gain = 15 dB
- Efficiency = 27%
- IM3 = –37 dBc
- ACPR < –40 dBc
• Typical CW performance at 2140 MHz, 28 V
- Output power at P–1dB = 220 W
- Efficiency = 56%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 200 W
(CW) output power
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 2 x 800 mA, P_OUT = 44 W average
f₁ = 2135 MHz, f₂ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
η_D
IMD
14
15
—
25.5
27
—
—
–37
–35
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Preliminary Data Sheet
1 of 10
Rev. 02, 2005-05-16