PTFA212002E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz

Typical Performance (cont.)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1600 mA, f = 2140 MHz,
3GPP WCDMA signal, Test Model 1 w/ 16 DPCH 67%
clipping, P/A R = 8.7 dB, 3.84 MHz BW
40
-20
35 _{ACPR Up}
Drain Efficiency
-25
30 ^{ACPR Low}
-30
25
-35
20
Gain
-40
15
-45
10
-50
ACPR
5
-55
0
-60
35
38
41
44
47
50
Output Power (dBm), Avg.
PTFA212002E
Voltage Sweep
I_DQ = 1600 m A, f = 2140 MHz, P_OUT = 200 W PEP,
tone spacing = 1 MHz
50
-5
45
-10
40 _{Drain Efficiency}
-15
35
-20
30
-25
25
20
15 Gain
-30
IM3
-35
-40
10
-45
5
-50
22 24 26 28 30 32 34
Drain Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.4 A
1.2 A
2.0 A
3.0 A
6.0 A
9.0 A
12.0 A
15.0 A
18.0 A
0
20 40 60 80 100
Case Temperature (°C)
Preliminary Data Sheet
4 of 10
Rev. 02, 2005-05-16