PTFA212002E Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz

PTFA212002E
Typical Performance (data taken in a production test fixture)
Broadband Circuit Performance
V_DD = 28 V, I_DQ = 1600 mA, P_OUT = 46.4 dBm CW
30
Efficiency
25
20
Gain
15
10
5
0
2070
Input
Return
2110
2150
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
2190
Frequency (MHz)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 1600 mA, f = 2140 MHz
17
T_CASE = 25°C
16
T_CASE = 90°C
15
Gain
14
60
Efficiency
50
40
30
20
13
40
43
46
49
52
Output Power (dBm)
10
55
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V, I_DQ = 1600 mA, P_OUT = 200 W PEP,
f = 2140 MHz
-25
-30
3rd Order
-35
-40
5th Order
-45
-50
7th Order
-55
0
10
20
30
40
Tone Spacing (MHz)
Two–tone Drive–up
V_DD = 28 V, I_DQ = 1600 mA, f = 2140 MHz,
tone spacing = 10 MHz
45
40
35
30
25
20
15
10
5
0
42
-20
-25
Efficiency
-30
-35
IM3 _-40
IM7
-45
-50
-55
IM5
-60
-65
44 46 48 50 52 54
Output Power (dBm), PEP
Preliminary Data Sheet
3 of 10
Rev. 02, 2005-05-16