PTFA212002E Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz

PTFA212002E
Reference Circuit
C0.0101µF
R2
1.3K ^V
R1
1.2K V
QQ1
LM7805
Q1
VDD
B C P56
C0.0201µF
C3
0.001µF
R2K3_V
R2K4 _V
R5
10 V
C4
10 µF
35V
R6
1K V
C5
0.1µF
R7
1K V
C11
8.2pF
l13
R8
10 V
C8
20pF
l7 l9
l11
l5
C10
0.8pF
R F _ IN
l1
l2
l3
l4
l6
l8 l10
l12
C6
0.1pF
C7
0.4 - 2.5pF
C9
20pF
R9
10 V
l14
C12
8.2pF
Reference Circuit Schematic for f = 2140 MHz
C13
10pF
l17
DUT
l15
l19
VDD
C15
C17
C19
1µF
0.02µF 10µF
50V
C23
12pF
l21 l23
l26 l27
C21
0.4 - 2.5pF
l25
l16
l18
l20
l22 l24
C22
12pF
R F_OUT
C14
10pF
C16
1µF
C18
0.02µF
VDD
C20
10µF
50V
A212002e_sch
Circuit Assembly Information
DUT
PTFA212002E
PCB
0.76 mm [.030"] thick, ε_r = 3.48
LDMOS Transistor
Rogers 4350
1 oz. copper
Microstrip
Electrical Characteristics at 2140 MHz¹
l1
0.060 λ, 50.0 Ω
l2
0.225 λ, 50.0 Ω
l3
0.210 λ, 36.0 Ω
l4
0.090 λ, 36.0 Ω
l5
0.550 λ, 50.0 Ω
l6
0.050 λ, 50.0 Ω
l7, l8
0.110 λ, 32.0 Ω
l9, l10
0.070 λ, 22.4 Ω
l11, l12
0.090 λ, 9.1 Ω
l13, l14
0.280 λ, 50.0 Ω
l15, l16
0.129 λ, 8.4 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
5.08 x 1.70
19.05 x 1.70
16.99 x 2.84
7.57 x 2.84
47.07 x 1.70
4.39 x 1.70
9.04 x 3.30
5.84 x 5.26
6.86 x 15.09
23.88 x 1.70
10.01 x 16.33
Dimensions: L x W (in.)
0.200 x 0.067
0.750 x 0.067
0.669 x 0.112
0.298 x 0.112
1.853 x 0.067
0.173 x 0.067
0.356 x 0.130
0.230 x 0.207
0.270 x 0.594
0.940 x 0.067
0.394 x 0.643
(table cont. next page)
Preliminary Data Sheet
6 of 10
Rev. 02, 2005-05-16