PTFA092213EL_15 Datasheet, PDF (9/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

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Package Outline Specifications (cont.)
PTFA092213EL
PTFA092213FL
Package H-34288-4/2
45° X 2.032
[45° X .080]
22.860
[.900]
2X 5.080
2X 30°
V
CL
D
V
[.200]
2X 1.143
n _[.045]
sig ^{4.889±.510}
de^{[.192±.020]}
CL
4X R0.508+-.1.32871
[ ] ^{R.020+-.0.00155}
G
9.398
for ^new[.370]
9.779
[.385]
d 2X 12.700
[.500]
de _{22.352±.200}
en^{[.880±.008]}
4.039+-.1.22574
[ ] ^{.159+-.0.00150}
m
m _1.575
o [.062] (SPH)
c 1.016
not ^{re [.040]}
CL
23.114
[.910]
C 66065-A0003- C743- 01-0027 H- 34288- 4_2 .dwg
S
19.558±.510
[.770±.020]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain; S = source; G = gate; V = V_DD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9 of 10
Rev. 05, 2015-03-04