PTFA092213EL_15 Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

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Typical Performance
PTFA092213EL
PTFA092213FL
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 960 MHz
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 960 MHz
20
19
18
17
16
15
14
13
35
Gain
Efficiency
40
45
50
Output Power (dBm)
Broadband Two-tone
70
n ₆₀
ig ₅₀
s ₄₀
de ₃₀
w ²⁰
e ₁₀
n ₀
ended ^{for 55}
21
20
T_CASE = -10°C
T_CASE = 25°C
19 ^{TCASE = 90°C}
Efficiency
18
17
16
15
Gain
14
35
40
45
50
Output Power (dBm)
Power Sweep, CW
50
45
40
35
30
Gain, Efficiency & Return Loss
m ^{vs. Frequency}
V_DD = 30 V, I_DQ = 1.85 A, P_OUT = 110 W
m₀
co Efficiency
-5
e _-10
t ^{r -15}
Return Loss
no ^-20
25
-25
V_DD = 30 V, ƒ = 960 MHz
20
19
18 I_DQ = 2.6 A
17 ^{IDQ = 1.85 A}
20
Gain
15
-30
16 ^{IDQ = 1.1 A}
-35
10
-40
900 910 920 930 940 950 960 970 980 990
Frequency (MHz)
15
35
40
45
50
Output Power (dBm)
70
60
50
40
30
20
10
0
55
55
Data Sheet
3 of 10
Rev. 05, 2015-03-04