PTFA092213EL_15 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Confidential, Limited Internal Distribution
Typical Performance (cont.)
PTFA092213EL
PTFA092213FL
Intermodulation Distortion vs.
Output Power
V_DD = 30 V, I_DQ = 1.85 A,
ƒ₁ = 960 MHz, ƒ₂ = 959 MHz
IS-95 CDMA Performance
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 960 MHz
-20
-30
5th
-40
3rd Order
50
40
30
design ^{Adj 750 kHz}
Efficiency
-50
w _-60
ne _-70
for ³⁵
7th
40
45
50
55
Output Power, PEP (dBm)
ended ^{Single-carrier WCDMA Performance}
V_DD = 30 V, I_DQ = 1850 mA, ƒ = 960 MHz,
m ^{3GPP WCDMA signal, PAR = 8.5 dB,}
20
Alt₁ 1.98 MHz
10
0
30
35
40
45
Output Power (dBm), Avg.
60
50
40
30
3.84 MHz Bandwidth
com _IMD
not ^{re Gain}
-30
-35
-40
-45
20
-50
-30
-40
-50
-60
-70
-80
50
10 ^Efficiency
-55
0
30
35
40
45
Output Power (dBm)
-60
50
Data Sheet
4 of 10
Rev. 05, 2015-03-04