PTFA092213EL_15 Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFA092213EL
PTFA092213FL
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1850 mA, P_OUT = 200 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Max
Gain
G_ps
17
17.5
—
Drain Efficiency
hD
40
42
—
Intermodulation Distortion
DC Characteristics
Characteristic
Conditions
IMD
Symbol
—
–30
–28
design ^{Min Typ}
Max
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
w _{Drain Leakage Current}
V_DS = 28 V, V_GS = 0 V
I_DSS
—
ne
V_DS = 63 V, V_GS = 0 V
I_DSS
—
r _{On-State Resistance}
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
fo _{Operating Gate Voltage}
V_DS = 30 V, I_DQ = 1850 mA
V_GS
2.0
d _{Gate Leakage Current}
V_GS = 10 V, V_DS = 0 V
I_GSS
—
de _{Maximum Ratings}
men ^Parameter
Symbol
Drain-Source Voltage
m _{Gate-Source Voltage}
o _{Junction Temperature}
ec _{Storage Temperature Range}
t ^r _{Thermal Resistance (TCASE = 70 °C, 220 W CW)}
no _{Ordering Information}
V_DSS
V_GS
T_J
T_STG
R_qJC
—
—
—
1.0
—
10.0
0.04
—
2.5
3.0
—
1.0
Value
65
–0.5 to +12
200
–40 to +150
0.23
Unit
dB
%
dBc
Unit
V
µA
µA
W
V
µA
Unit
V
V
°C
°C
°C/W
Type and Version
Package Outline
PTFA092213EL V4
H-33288-6
PTFA092213EL V4 R250 H-33288-6
PTFA092213FL V5
H-34288-4/2
PTFA092213FL V5 R250 H-34288-4/2
Package Description
Shipping
Thermally-enhanced, slotted flange, single-ended Tray
Thermally-enhanced, slotted flange, single-ended Tape & Reel, 250 pcs
Thermally-enhanced, earless flange, single-ended Tray
Thermally-enhanced, earless flange, single-ended Tape & Reel, 250 pcs
Data Sheet
2 of 10
Rev. 05, 2015-03-04