PTFA092213EL_15 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
PTFA092213EL
PTFA092213FL
Description
The PTFA092213EL and PTFA092213FL are 220-watt, internally- PTFA092213EL
matched LDMOS FETs designed for use in cellular power amplifier Package H-33288-6
applications in the 920 to 960 MHz band. These devices feature
internal I/O matching and thermally-enhanced open-cavity ceramic
packages with slotted or earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
ign ^PTFA092213FL
des ^{Package H-34288-4/2}
w _{Two-carrier WCDMA Performance}
e _{VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz,}
n 3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, 3.84 MHz Bandwidth
for ⁴⁰
30
d _Gain
e ₂₀
d ₁₀
Efficiency
en 0
IMD_lower
m -10
m -20
o _-30
rec ³⁰
IMD_upper
ACPR
35
40
45
Output Power (dBm)
-20
-25
-30
-35
-40
-45
-50
-55
50
not _{RF Characteristics}
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 17.5 dB
- Efficiency = 29%
- Intermodulation distortion = –32 dBc
- Adjacent channel power = –42.5 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P_1dB = 250 W
- Linear Gain = 17.5 dB
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
• Pb-free, RoHS-compliant
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 1850 mA, P_OUT = 50 W average, ƒ₁ = 950 MHz, ƒ₂ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
—
17.5
—
dB
hD
—
29
—
%
Intermodulation Distortion
IMD
—
–32
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05, 2015-03-04