IKP10N60T_15 Datasheet, PDF (9/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKP10N60T
TRENCHSTOP™ Series
p
10⁰K/W
D=0.5
1 0 ^-1K /W
0.2
0.1
0.05
R,(K/W)
0.2911
0.4092
0.5008
0.1529
R1
, (s)
6.53*10^-2
8.33*10^-3
7.37*10^-4
7.63*10^-5
R2
0.02
0.01
C1=1/R1 C2=2/R2
single pulse
10⁰K/W ^D=0.5
1 0 ^-1K /W
0.2
R,(K/W) , (s)
0.3169
4.629*10^-2 6.53*10^-2
0.1
0.4734
0.6662
7.07*10^-3
1.068*10^-3
0.4398
1.253*10^-4
0.05 R1
R2
0.02
0.01
C1=1/R1 C2=2/R2
single pulse
1 0 ^-2K /W
10µs 100µs
1ms
10ms
t_P, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = t_p / T)
100ms
1 0 ^-2K /W
1µs 10µs 100µs 1ms 10ms 100ms
t_P, PULSE WIDTH
Figure 22. Diode transient thermal
impedance as a function of pulse
width
(D=t_P/T)
300ns
250ns
200ns
T_J=175°C
150ns
100ns
50ns
T_J=25°C
0ns
200A/µs 400A/µs 600A/µs 800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(V_R=400V, I_F=10A,
Dynamic test circuit in Figure E)
0,8µC
0,7µC
T_J=175°C
0,6µC
0,5µC
0,4µC
0,3µC
T_J=25°C
0,2µC
0,1µC
0,0µC
200A/µs 400A/µs 600A/µs 800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(V_R = 400V, I_F = 10A,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
9
Rev. 2.6 11.05.2015