IKP10N60T_15 Datasheet, PDF (10/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKP10N60T
TRENCHSTOP™ Series
p
14A
T_J=175°C
12A
10A
8A
T_J=25°C
6A
4A
2A
0A
200A/µs 400A/µs 600A/µs 800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(V_R = 400V, I_F = 10A,
Dynamic test circuit in Figure E)
-700A/µs
T_J=25°C
-600A/µs
-500A/µs
-400A/µs
-300A/µs
T_J=175°C
-200A/µs
-100A/µs
0A/µs
400A/µs
600A/µs
800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V_R=400V, I_F=10A,
Dynamic test circuit in Figure E)
30A
20A
10A
T =25°C
J
175°C
2,0V
1,5V
1,0V
0,5V
I =20A
F
10A
5A
0A
0V
1V
2V
V_F, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
0,0V
-50°C
0°C
50°C 100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
IFAG IPC TD VLS
10
Rev. 2.6 11.05.2015