IKP10N60T_15 Datasheet, PDF (6/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKP10N60T
TRENCHSTOP™ Series
p
100ns
10ns
t_d(on)
t_d(off)
t
f
t_r
1ns
0A
5A
10A
15A
20A
Figure 9.
I_C, COLLECTOR CURRENT
Typical switching times as a
function of collector current
(inductive load, T_J=175°C,
V_CE = 400V, V_GE = 0/15V, r_G = 23Ω,
Dynamic test circuit in Figure E)
100ns
10ns
t_d(on)
t_r
t_d(off)
t
f
1ns





R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_J = 175°C,
V_CE= 400V, V_GE = 0/15V, I_C = 10A,
Dynamic test circuit in Figure E)
100ns
t
d(on)
10ns
t_r
t_d(off)
t_f
1ns
25°C 50°C 75°C 100°C 125°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE = 400V,
V_GE = 0/15V, I_C = 10A, r_G=23Ω,
Dynamic test circuit in Figure E)
7V
6V
5V
typ.
max.
4V
m in .
3V
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I_C = 0.3mA)
IFAG IPC TD VLS
6
Rev. 2.6 11.05.2015