IKP10N60T_15 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKP10N60T
TRENCHSTOP™ Series
p
Switching Characteristic, Inductive Load, at T_j=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
Q_rr
I_rrm
di_rr/dt
Tj=25C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L_=60nH,C_=40pF
L_, C_ from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
T_j=25C,
V_R=400V, I_F=10A,
di_F/dt=880A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
12
8
215
38
0.16
0.27
0.43
115
0.38
10
680
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
Switching Characteristic, Inductive Load, at T_j=175 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during t_b
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_rr
Q_rr
I_rrm
di_rr/dt
Tj=175C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L_=60nH,C_=40pF
L_, C_ from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
T_j=175C
V_R=400V, I_F=10A,
di_F/dt=880A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
10
11
233
63
0.26
0.35
0.61
200
0.92
13
390
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
IFAG IPC TD VLS
3
Rev. 2.6 11.05.2015