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| IKP10N60T_15 Datasheet, PDF (8/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode | |||
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IKP10N60T
TRENCHSTOP⢠Series
p
15V
10V
120V
480V
5V
0 V0 n C
20nC
40nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=10 A)
60nC
1nF
C iss
100pF
C oss
C rss
10pF
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
150A
125A
100A
75A
50A
25A
0 A1 2 V
14V
16V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ï£ 400V, Tj ï£ 150ï°C)
12µs
10µs
8µs
6µs
4µs
2µs
0µs
10V
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
IFAG IPC TD VLS
8
Rev. 2.6 11.05.2015
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