IKP08N65H5_15 Datasheet, PDF (9/17 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKP08N65H5
Highspeedswitchingseriesfifthgeneration
24
21 ^VGE=20V
18V
18
12V
10V
15
8V
12
7V
6V
9
5V
24
Tj=25°C
Tj=150°C
21
18
15
12
9
6
6
3
3
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
0
4
5
6
7
8
9
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=150°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.25
2.00
IC=2A
IC=4A
IC=8A
1.75
100
td(off)
tf
td(on)
tr
1.50
10
1.25
1.00
0.75
0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
1
0 3 6 9 12 15 18 21 24
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=48Ω,Dynamictestcircuitin
Figure E)
9
Rev.2.1,2015-05-05