IKP08N65H5_15 Datasheet, PDF (7/17 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKP08N65H5
Highspeedswitchingseriesfifthgeneration
DiodeCharacteristic,atTvj=150°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=150°C,
VR=400V,
IF=4.0A,
diF/dt=800A/µs
Tvj=150°C,
VR=400V,
IF=2.0A,
diF/dt=800A/µs
-
55
- ns
- 0.28 - µC
- 7.7 - A
- -145 - A/µs
-
42
- ns
- 0.20 - µC
- 8.2 - A
- -220 - A/µs
7
Rev.2.1,2015-05-05