IKP08N65H5_15 Datasheet, PDF (10/17 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

100
td(off)
tf
td(on)
tr
10
IKP08N65H5
Highspeedswitchingseriesfifthgeneration
100
td(off)
tf
td(on)
tr
10
1
5 15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=4A,Dynamictestcircuitin
Figure E)
1
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=4A,rG=48Ω,DynamictestcircuitinFigure
E)
5.5
typ.
min.
5.0
max.
0.8
Eoff
Eon
0.7
Ets
4.5
0.6
4.0
0.5
3.5
0.4
3.0
0.3
2.5
0.2
2.0
1.5
0.1
1.0
0
25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
0.0
0
3 6 9 12 15 18 21 24
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature
functionofcollectorcurrent
(IC=0.08mA)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=48Ω,Dynamictestcircuitin
Figure E)
10
Rev.2.1,2015-05-05