IKP08N65H5_15 Datasheet, PDF (12/17 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

1000
Ciss
Coss
Crss
100
10
IKP08N65H5
Highspeedswitchingseriesfifthgeneration
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
1
0
5
10
15
20
25
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
0.01
1E-6
i:
1
2
3
4
ri[K/W]: 0.3389743 0.8017237 0.7055106 0.3537915
τi[s]: 2.2E-5
3.2E-4
3.0E-3
0.02235159
1E-5 1E-4 0.001 0.01 0.1
1
tp,PULSEWIDTH[s]
Figure 18. IGBTtransientthermalresistance
(D=tp/T)
70
Tj=25°C, IF = 4A
65
Tj=150°C, IF = 4A
1
D=0.5
60
0.2
55
0.1
0.05
50
0.1
0.02
0.01
45
single pulse
40
35
0.01
30
0.001
1E-7
1E-6
i:
1
2
3
4
ri[K/W]: 0.4457406 0.911159 0.9864113 0.5566891
τi[s]: 1.9E-5
2.4E-4 2.3E-3
0.02112308
1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s]
Figure 19. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
25
20
600 700 800 900 1000 1100 1200 1300 1400 1500 1600
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 20. Typicalreverserecoverytimeasafunction
ofdiodecurrentslope
(VR=400V)
12
Rev.2.1,2015-05-05